V-I Characteristics of Semiconductor Diode

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Free electrons

________ in the p- type and holes in the n- type are called minority carriers.

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bias condition

In forward ________, p- type of the semiconductor diode is connected to the positive terminal and the n- type is connected to the negative terminal of the external voltage.

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reverse bias condition

In ________, the p- type of the pn junction is connected to the negative terminal and the n- type is connected to the positive terminal of the external voltage.

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x axis

Normally the voltage is taken along the ________ of the graph in volts and current taken along the y- axis in amperes.

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bias condition

In zero ________, no external voltage is applied to the semiconductor diode, i.e., the circuit is open.

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Junction Breakdown

Characterized by sudden increase of reverse current and a sudden fall of resistance of barrier region.

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Minority Carriers

Free electrons in p-type and holes in n-type

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Reverse Saturation Current

Denoted by IS, it is a small current of order micro ampere which flows through the circuit when diode is in reverse bias.

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Resistance

It is Voltage divided by Current

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V-I Characteristics

It is the curve between voltage across the junction and the current through the circuit.

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Zero Bias condition

No external voltage is applied to the semiconductor

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Forward bias

p-type connected to positive terminal and n-type connected to negative terminal

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Forward voltage

0.7 V for Si or Silicon and 0.3 V for Ge or Germanium

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Graphical forward condition

the current first increases slowly and the curve in non-linear

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Reverse bias

p-type of the pn junction is connected to the negative terminal and the n-type is connected to the positive terminal of the external voltage

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